MJE5741 Bipolar Transistor
Characteristics of MJE5741 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 8 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 80 W
- DC Current Gain (hfe): 200
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of MJE5741
Replacement and Equivalent for MJE5741 transistor
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