MJE350 Bipolar Transistor

Characteristics of MJE350 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE350

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE350 is the MJD340.

Replacement and Equivalent for MJE350 transistor

You can replace the MJE350 with the KSE350 or MJE350G.

Lead-free Version

The MJE350G transistor is the lead-free version of the MJE350.
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