KSE13009LH1 Bipolar Transistor
Characteristics of KSE13009LH1 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 120 W
- DC Current Gain (hfe): 8 to 17
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3P
Pinout of KSE13009LH1
Classification of hFE
Marking
Replacement and Equivalent for KSE13009LH1 transistor
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