KSE13009H1 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 400 V
• Collector-Base Voltage, max: 700 V
• Emitter-Base Voltage, max: 9 V
• Collector Current − Continuous, max: 12 A
• Collector Dissipation: 100 W
• DC Current Gain (h_fe): 8 to 17
• Transition Frequency, min: 4 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-220

Here is an image showing the pin diagram of this transistor.The KSE13009H1 transistor can have a current gain of 8 to 17. The gain of the KSE13009 will be in the range from 8 to 40, for the KSE13009H2 it will be in the range from 15 to 28.The KSE13009H1 transistor is marked as "E13009-1".You can replace the KSE13009H1 with the FJP13009, FJP13009H1, MJE13009 or MJE13009G.