KSE13001 Bipolar Transistor

Characteristics of KSE13001 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.6 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of KSE13001

The KSE13001 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right,
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSE13001 transistor can have a current gain of 40 to 80. The gain of the KSE13001-O will be in the range from 55 to 80, for the KSE13001-R it will be in the range from 40 to 65.
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