KSD2012-G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 60 V
• Collector-Base Voltage, max: 60 V
• Emitter-Base Voltage, max: 7 V
• Collector Current − Continuous, max: 3 A
• Collector Dissipation: 25 W
• DC Current Gain (h_fe): 150 to 320
• Transition Frequency, min: 3 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-220F

Here is an image showing the pin diagram of this transistor.The KSD2012-G transistor can have a current gain of 150 to 320. The gain of the KSD2012 will be in the range from 100 to 320, for the KSD2012-Y it will be in the range from 100 to 200.The complementary PNP transistor to the KSD2012-G is the KSB1366-G.The BDP949 (SOT-223) and FZT692B (SOT-223) is the SMD version of the KSD2012-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the KSD2012-G with the 2SC1826, 2SC1985, 2SC1986, 2SC2075, 2SC3179, 2SC3851, 2SC3851A, 2SC4007, 2SC4008, 2SC4550, 2SC4551, 2SC4552, 2SD1134, 2SD1266, 2SD1266A, 2SD1274, 2SD1274A, 2SD1274B, 2SD1761, 2SD2012, 2SD2061, 2SD2394, 2SD313, 2SD613, 2SD823, BD203, BD241A, BD241B, BD241C, BD243A, BD243B, BD243C, BD303, BD535, BD537, BD539A, BD539B, BD539C, BD539D, BD543A, BD543B, BD543C, BD545A, BD545B, BD545C, BD797, BD799, BD801, BD807, BD809, BD949, BD951, BD953, BD955, BDT81, BDT81F, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDX77, D44H11, D44H11FP, D44H8, MJE15028, MJE15028G, TIP41D or TIP42D.