KSD1021-G Bipolar Transistor

Characteristics of KSD1021-G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92S

Pinout of KSD1021-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD1021-G transistor can have a current gain of 200 to 400. The gain of the KSD1021 will be in the range from 120 to 400, for the KSD1021-Y it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSD1021-G is the KSB811-G.

Replacement and Equivalent for KSD1021-G transistor

You can replace the KSD1021-G with the 2SC2500, 2SC2500-A, 2SC2500-B, 2SC2500-C, 2SC2500-D, 2SC4408, 2SC4604, 2SD1207, 2SD1207-T, 2SD1347, 2SD1347T, 2SD1616, 2SD1616-K, 2SD1616A, 2SD1616A-K, 2SD1835, 2SD1835-T, 2SD789, KSC2500, KSC2500-A, KSC2500-B, KSC2500-C, KSC2500-D, KSC5019, KSD1616, KSD1616-G, KSD1616A, KSD1616A-G, KSD471AC or KSD471ACG.
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