KSC5026M Bipolar Transistor
Characteristics of KSC5026M Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 800 V
- Collector-Base Voltage, max: 1100 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 10 to 40
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular KSC5026 transistor
Pinout of KSC5026M
Classification of hFE
If you find an error please send an email to mail@el-component.com