KSB1097 Bipolar Transistor

Characteristics of KSB1097 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 40 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular 2SB1097 transistor

Pinout of KSB1097

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB1097 transistor can have a current gain of 40 to 200. The gain of the KSB1097-O will be in the range from 80 to 120, for the KSB1097-R it will be in the range from 40 to 80, for the KSB1097-Y it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSB1097 is the KSD1588.

Replacement and Equivalent for KSB1097 transistor

You can replace the KSB1097 with the 2SA1010, 2SB1097, 2SB707, 2SB708, BD204, BD304, BD536, BD538, BD798, BD800, BD802, BD808, BD810, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT92, BDT92F, BDT94, BDT94F, BDT96, BDT96F, BDX78, KSA1010, KSB707, KSB708, MJE15029 or MJE15029G.
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