BSP60 Bipolar Transistor
Characteristics of BSP60 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 1.25 W
- DC Current Gain (hfe): 1000
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-223
Pinout of BSP60
Complementary NPN transistor
Replacement and Equivalent for BSP60 transistor
If you find an error please send an email to mail@el-component.com