BDX66B Bipolar Transistor

Characteristics of BDX66B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -16 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX66B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDX66B is the BDX67B.

Replacement and Equivalent for BDX66B transistor

You can replace the BDX66B with the BDX66C, BDX68B, BDX68C, MJ11015, MJ11015G, MJ11033, MJ11033G or MJ4032.
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