BDW84C Bipolar Transistor
Characteristics of BDW84C Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 750 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-247
Pinout of BDW84C
Complementary NPN transistor
Replacement and Equivalent for BDW84C transistor
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