BDV66D Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -150 V
• Collector-Base Voltage, max: -160 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -16 A
• Collector Dissipation: 200 W
• DC Current Gain (h_fe): 1000
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-3P

Here is an image showing the pin diagram of this transistor.The complementary NPN transistor to the BDV66D is the BDV67D.