BC857C Bipolar Transistor

Characteristics of BC857C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC857C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC857C transistor can have a current gain of 420 to 800. The gain of the BC857 will be in the range from 110 to 800, for the BC857A it will be in the range from 110 to 220, for the BC857B it will be in the range from 200 to 450.

Complementary NPN transistor

The complementary NPN transistor to the BC857C is the BC847C.

Replacement and Equivalent for BC857C transistor

You can replace the BC857C with the 2SA1518, 2SA1519, 2SA1520, 2SA1521, BC856, BC856C, BC860, BC860C, FMMTA55, FMMTA56, KST55, KST56, MMBTA55, MMBTA56, PMBTA56, SMBTA55 or SMBTA56.
If you find an error please send an email to mail@el-component.com