BC485 Bipolar Transistor

Characteristics of BC485 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 45 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 60 to 400
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of BC485

The BC485 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC485 transistor can have a current gain of 60 to 400. The gain of the BC485A will be in the range from 100 to 250, for the BC485B it will be in the range from 160 to 400, for the BC485L it will be in the range from 60 to 150.

Complementary PNP transistor

The complementary PNP transistor to the BC485 is the BC486.

SMD Version of BC485 transistor

The 2SC3912 (SOT-23), 2SC3913 (SOT-23), 2SC3914 (SOT-23) and 2SC3915 (SOT-23) is the SMD version of the BC485 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC485 transistor

You can replace the BC485 with the BC487 or BC489.
If you find an error please send an email to mail@el-component.com