2SD1716-Q Bipolar Transistor

Characteristics of 2SD1716-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SD1716-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1716-Q transistor can have a current gain of 60 to 120. The gain of the 2SD1716 will be in the range from 60 to 200, for the 2SD1716-P it will be in the range from 100 to 200, for the 2SD1716-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1716-Q might only be marked "D1716-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1716-Q is the 2SB1161-Q.

Replacement and Equivalent for 2SD1716-Q transistor

You can replace the 2SD1716-Q with the 2SC4388 or 2SC5359.
If you find an error please send an email to mail@el-component.com