2SD1716-Q Bipolar Transistor
Characteristics of 2SD1716-Q Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 120 W
- DC Current Gain (hfe): 60 to 120
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3PF
Pinout of 2SD1716-Q
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD1716-Q transistor
If you find an error please send an email to mail@el-component.com