2SD1615A-GP Bipolar Transistor

Characteristics of 2SD1615A-GP Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1615A-GP

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1615A-GP transistor can have a current gain of 200 to 400. The gain of the 2SD1615A will be in the range from 135 to 400, for the 2SD1615A-GQ it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1615A-GP might only be marked "D1615A-GP".

Replacement and Equivalent for 2SD1615A-GP transistor

You can replace the 2SD1615A-GP with the 2STF1360.
If you find an error please send an email to mail@el-component.com