2SD1615-GM Bipolar Transistor
Characteristics of 2SD1615-GM Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 50 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 2 W
- DC Current Gain (hfe): 135 to 270
- Transition Frequency, min: 160 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-89
Pinout of 2SD1615-GM
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD1615-GM transistor
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