Characteristics of 2SC1009G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 8 V
- Collector Current − Continuous, max: 0.7 A
- Collector Dissipation: 0.8 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SC1009G
The 2SC1009G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The 2SC1009G transistor can have a current gain of
200 to
400. The gain of the
2SC1009 will be in the range from
40 to
400, for the
2SC1009O it will be in the range from
70 to
140, for the
2SC1009R it will be in the range from
40 to
80, for the
2SC1009Y it will be in the range from
120 to
240.
Marking
Sometimes the "2S" prefix is not marked on the package - the 2SC1009G might only be marked "
C1009G".
Complementary PNP transistor
The complementary
PNP transistor to the 2SC1009G is the
2SA709G.
2SC1009G Transistor in TO-92 Package
The
KSC1009G is the TO-92 version of the 2SC1009G.
Replacement and Equivalent for 2SC1009G transistor
You can replace the 2SC1009G with the
KSC1009 or
KSC1009G.
If you find an error please send an email to mail@el-component.com