2SB947A Bipolar Transistor
Characteristics of 2SB947A Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -40 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 35 W
- DC Current Gain (hfe): 60 to 260
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220F
Pinout of 2SB947A
Classification of hFE
Marking
Replacement and Equivalent for 2SB947A transistor
If you find an error please send an email to mail@el-component.com