2SB806-KR Bipolar Transistor

Characteristics of 2SB806-KR Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB806-KR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB806-KR transistor can have a current gain of 90 to 180. The gain of the 2SB806 will be in the range from 90 to 400, for the 2SB806-KP it will be in the range from 200 to 400, for the 2SB806-KQ it will be in the range from 135 to 270.

Marking

The 2SB806-KR transistor is marked as "KR".

Complementary NPN transistor

The complementary NPN transistor to the 2SB806-KR is the 2SD1007-HR.

Replacement and Equivalent for 2SB806-KR transistor

You can replace the 2SB806-KR with the 2SA1201, 2SD1007, 2SD1007-HR or KTA1661.
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