2SB1299Q Bipolar Transistor

Characteristics of 2SB1299Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 300 to 500
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1299Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1299Q transistor can have a current gain of 300 to 500. The gain of the 2SB1299 will be in the range from 300 to 700, for the 2SB1299P it will be in the range from 400 to 700.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1299Q might only be marked "B1299Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1299Q is the 2SD1273Q.

SMD Version of 2SB1299Q transistor

The BDP950 (SOT-223) and NZT660A (SOT-223) is the SMD version of the 2SB1299Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1299Q transistor

You can replace the 2SB1299Q with the 2SA1262, 2SA1488, 2SA1488A, 2SA770, 2SA771, BD204, BD242A, BD242B, BD242C, BD244A, BD244B, BD244C, BD304, BD536, BD538, BD540A, BD540B, BD540C, BD544A, BD544B, BD544C, BD546A, BD546B, BD546C, BD798, BD800, BD802, BD808, BD810, BD950, BD952, BD954, BD956, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D44C10, D44C11, D44C12, D44C7, D44C8, D44C9, D45C10, D45C11, D45C12, D45C7, D45C8, D45C9, D45H11, D45H11FP, D45H8, MJE15029 or MJE15029G.
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