2SB1009-P Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -32 V
• Collector-Base Voltage, max: -40 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -2 A
• Collector Dissipation: 10 W
• DC Current Gain (h_fe): 82 to 180
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The 2SB1009-P transistor can have a current gain of 82 to 180. The gain of the 2SB1009 will be in the range from 82 to 390, for the 2SB1009-Q it will be in the range from 120 to 270, for the 2SB1009-R it will be in the range from 180 to 390.Sometimes the "2S" prefix is not marked on the package - the 2SB1009-P might only be marked "B1009-P".The complementary NPN transistor to the 2SB1009-P is the 2SD1380-P.You can replace the 2SB1009-P with the 2SA1214, 2SA1217, 2SA1359, 2SA715, 2SB1165, 2SB1166, 2SB744, 2SB744A, BD132, BD176, BD178, BD188, BD190, BD234, BD234G, BD236, BD236G, BD376, BD378, BD786, BD788, BD788G, KSB744, KSB744A, KSE170, KSE171, KTA1715, MJE170, MJE170G, MJE171, MJE171G, MJE230, MJE232, MJE233, MJE235, MJE371 or MJE371G.