2SA503 Bipolar Transistor
Characteristics of 2SA503 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.6 A
- Collector Dissipation: 6 W
- DC Current Gain (hfe): 30 to 300
- Transition Frequency, min: 130 MHz
- Operating and Storage Junction Temperature Range: -65 to +175 °C
- Package: TO-39
Pinout of 2SA503
Classification of hFE
Marking
Complementary NPN transistor
If you find an error please send an email to mail@el-component.com