2SA1365-G Bipolar Transistor
Characteristics of 2SA1365-G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -20 V
- Collector-Base Voltage, max: -25 V
- Emitter-Base Voltage, max: -4 V
- Collector Current − Continuous, max: -0.7 A
- Collector Dissipation: 0.15 W
- DC Current Gain (hfe): 400 to 800
- Transition Frequency, min: 180 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of 2SA1365-G
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SA1365-G transistor
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