2SA1365-G Bipolar Transistor

Characteristics of 2SA1365-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -25 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 180 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA1365-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1365-G transistor can have a current gain of 400 to 800. The gain of the 2SA1365 will be in the range from 150 to 800, for the 2SA1365-E it will be in the range from 150 to 300, for the 2SA1365-F it will be in the range from 250 to 500.

Marking

The 2SA1365-G transistor is marked as "AG".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1365-G is the 2SC3440-G.

Replacement and Equivalent for 2SA1365-G transistor

You can replace the 2SA1365-G with the FMMT591A.
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