2SA1200-O Bipolar Transistor

Characteristics of 2SA1200-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SA1200-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1200-O transistor can have a current gain of 80 to 160. The gain of the 2SA1200 will be in the range from 80 to 240, for the 2SA1200-Y it will be in the range from 120 to 240.

Marking

The 2SA1200-O transistor is marked as "BO".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1200-O is the 2SC2880-O.

Replacement and Equivalent for 2SA1200-O transistor

You can replace the 2SA1200-O with the BF621, BF623, DXT5401 or KTA1660.
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