2N6433 Bipolar Transistor
Characteristics of 2N6433 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -300 V
- Collector-Base Voltage, max: -300 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 30 to 150
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-18
Pinout of 2N6433
Complementary NPN transistor
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