2N6306 Bipolar Transistor

Characteristics of 2N6306 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 500 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6306

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6306 transistor

You can replace the 2N6306 with the 2N6307, 2N6676, 2N6677, 2N6678, BUX48, BUX48A, BUY69A, BUY69B, BUY70A, BUY70B, MJ12021, MJ12022, MJ16006 or MJ16008.
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