2N6130 Bipolar Transistor

Characteristics of 2N6130 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N6130

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N6130 is the 2N6133.

Replacement and Equivalent for 2N6130 transistor

You can replace the 2N6130 with the 2N5496, 2N6131, 2N6487, 2N6487G, 2N6488, 2N6488G, BD707, BD709, BD711, BD743A, BD743B, BD743C, BD907, BD909, BD911, BDT91, BDT91F, BDT93, BDT93F, BDT95, BDT95F, MJE3055T, MJE3055TG, MJF3055 or MJF3055G.
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