2N5416 Bipolar Transistor
Characteristics of 2N5416 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -300 V
- Collector-Base Voltage, max: -350 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 30 to 120
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-39
Pinout of 2N5416
Replacement and Equivalent for 2N5416 transistor
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