2N5416 Bipolar Transistor

Characteristics of 2N5416 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -350 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 30 to 120
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-39

Pinout of 2N5416

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N5416 transistor

You can replace the 2N5416 with the NTE397.
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