2N5302G Bipolar Transistor

Characteristics of 2N5302G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 15 to 60
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The 2N5302G is the lead-free version of the 2N5302 transistor

Pinout of 2N5302G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N5302G transistor

You can replace the 2N5302G with the 2N5302, 2N5685, 2N5685G, 2N5686, 2N5686G, MJ14000, MJ14000G, MJ14002 or MJ14002G.
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