2N3499 Bipolar Transistor
Characteristics of 2N3499 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 100 to 300
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-39
Pinout of 2N3499
SMD Version of 2N3499 transistor
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