IRLU3636 MOSFET
Specifications of IRLU3636 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 6.8 mΩ
- Continuous Drain Current: 99 A
- Total Gate Charge: 33 nC
- Power Dissipation: 143 W
- Package: I-PAK
Pinout of IRLU3636
