IRLU3110Z MOSFET
Specifications of IRLU3110Z MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 14 mΩ
- Continuous Drain Current: 63 A
- Total Gate Charge: 34 nC
- Power Dissipation: 140 W
- Package: I-PAK
Pinout of IRLU3110Z
