IRLS4030 MOSFET
Specifications of IRLS4030 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 4.3 mΩ
- Continuous Drain Current: 180 A
- Total Gate Charge: 87 nC
- Power Dissipation: 370 W
- Package: D2-PAK
Pinout of IRLS4030
