IRLS3036-7P MOSFET
Specifications of IRLS3036-7P MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 1.9 mΩ
- Continuous Drain Current: 300 A
- Total Gate Charge: 110 nC
- Power Dissipation: 380 W
- Package: D2-PAK 7-LEAD
Pinout of IRLS3036-7P
