IRLR3114Z MOSFET
Specifications of IRLR3114Z MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 40 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 4.5 mΩ
- Continuous Drain Current: 130 A
- Total Gate Charge: 40 nC
- Power Dissipation: 140 W
- Package: D-PAK
Pinout of IRLR3114Z
