IRLMS2002 MOSFET
Specifications of IRLMS2002 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 20 V
- Gate-to-Source Voltage, max: ±12 V
- Drain-Source On-State Resistance, max: 30 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 15 nC
- Power Dissipation: 2 W
- Package: TSOP-6 (MICRO 6)
Pinout of IRLMS2002
