IRLML2060 MOSFET
Specifications of IRLML2060 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 480 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 0.67 nC
- Power Dissipation: 0 W
- Package: MICRO 3/ SOT-23