IRLL024N MOSFET
Specifications of IRLL024N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 65 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 10.4 nC
- Power Dissipation: 0 W
- Package: SOT-223