IRLHS6342 MOSFET
Specifications of IRLHS6342 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±12 V
- Drain-Source On-State Resistance, max: 15.5 mΩ
- Continuous Drain Current: 19 A
- Total Gate Charge: 11 nC
- Power Dissipation: 0 W
- Package: PQFN 2 X 2
Pinout of IRLHS6342
