IRLHM620 MOSFET
Specifications of IRLHM620 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 20 V
- Gate-to-Source Voltage, max: ±12 V
- Drain-Source On-State Resistance, max: 2.5 mΩ
- Continuous Drain Current: 40 A
- Total Gate Charge: 52 nC
- Power Dissipation: 37 W
- Package: PQFN 3.3 X 3.3
Pinout of IRLHM620
