IRLB3036G MOSFET

Specifications of IRLB3036G MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 60 V
  • Gate-to-Source Voltage, max: ±16 V
  • Drain-Source On-State Resistance, max: 2.4 mΩ
  • Continuous Drain Current: 270 A
  • Total Gate Charge: 91 nC
  • Power Dissipation: 380 W
  • Package: TO-220AB

Pinout of IRLB3036G

IRLB3036G pinout

Replacement and Equivalent of IRLB3036G Transistor

You can replace the IRLB3036G with the IRLB3036