IRFZ20 MOSFET
Specifications of IRFZ20 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 50 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.1 mΩ
- Continuous Drain Current: 15 A
- Total Gate Charge: 17 nC
- Power Dissipation: 40 W
- Package: TO-220AB