IRFY044 MOSFET
Specifications of IRFY044 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 40 mΩ
- Continuous Drain Current: 16 A
- Total Gate Charge: 58.7 nC
- Power Dissipation: 0 W
- Package: TO-257AA
Pinout of IRFY044
