IRFU9N20D MOSFET

Specifications of IRFU9N20D MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±30 V
  • Drain-Source On-State Resistance, max: 380 mΩ
  • Continuous Drain Current: 9.4 A
  • Total Gate Charge: 18 nC
  • Power Dissipation: 86 W
  • Package: I-PAK

Pinout of IRFU9N20D

IRFU9N20D pinout

Replacement and Equivalent of IRFU9N20D Transistor

You can replace the IRFU9N20D with the IRFU13N20D, IRFU15N20D