IRFS59N10D MOSFET

Specifications of IRFS59N10D MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±30 V
  • Drain-Source On-State Resistance, max: 25 mΩ
  • Continuous Drain Current: 59 A
  • Total Gate Charge: 76 nC
  • Power Dissipation: 200 W
  • Package: D2-PAK

Pinout of IRFS59N10D

IRFS59N10D pinout

Replacement and Equivalent of IRFS59N10D Transistor

You can replace the IRFS59N10D with the IRFS4321