IRFS59N10D MOSFET
Specifications of IRFS59N10D MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 25 mΩ
- Continuous Drain Current: 59 A
- Total Gate Charge: 76 nC
- Power Dissipation: 200 W
- Package: D2-PAK
Pinout of IRFS59N10D
![IRFS59N10D pinout](/images/mosfet/irfs59n10d-pinout.jpg)