IRFPS3815 MOSFET
Specifications of IRFPS3815 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 150 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 15 mΩ
- Continuous Drain Current: 105 A
- Total Gate Charge: 260 nC
- Power Dissipation: 441 W
- Package: SUPER 247 (TO-274AA)