IRFPS3810 MOSFET
Specifications of IRFPS3810 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 9 mΩ
- Continuous Drain Current: 141 A
- Total Gate Charge: 260 nC
- Power Dissipation: 441 W
- Package: SUPER 247 (TO-274AA)
Pinout of IRFPS3810
