IRFP4368 MOSFET
Specifications of IRFP4368 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 75 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.8 mΩ
- Continuous Drain Current: 350 A
- Total Gate Charge: 380 nC
- Power Dissipation: 520 W
- Package: TO-247AC
Pinout of IRFP4368
